產品描述

The HTH1D38S010P is a GaN Power Transistor designed for cellular base station applications with 10W saturation output power covering frequency range from 2.3 to 4.0 GHz.

優(yōu)勢介紹

  • Operating Frequency Range: 2.3 to 4.0 GHz

  • Operating Drain Voltage: +48 V

  • Saturation Output Power: 10 W

  • Advanced Linearity Performance

  • High Efficiency

  • High Gain over the Frequency Range

  • Small footprint package, DFN 4x4-6L

28V LDMOS MMIC

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